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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195472
Description: This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the perfo ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1207035
Description: Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwave FETs. This is because the complex signals used in communication systems invoke charge trapping and ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1202617
Description: A difficulty concerning characterization of charge trapping in microwave FETs by performing pulse measurements is the possible overlap between the trapping and self-heating rates. Another difficulty i ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/326772
Description: GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/303408
Description: Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/307675
Description: This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was de ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/269872
Description: Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated switching power converters. Pulsed IV characterization of GaN FETs revealed ON resistance dependence ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267380
Description: Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables high ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285933
Description: A pulsed I-V thermal resistance Rth measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/284550
Description: RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state qui ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1227957
Description: 4 page(s)
Reviewed: Reviewed
Date: 2009
Subject Keyword: 099900 Other Engineering
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1165040
Description: 6 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1169306
Description: 9 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1228119
Description: 4 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1169443
Description: 10 page(s)
Reviewed: Reviewed