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Date: 2016
Subject Keyword: millimetre-wave | HEMT | FET modelling | ETSI
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1207162
Description: 150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a band ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1213345
Description: The frequency range 25-45 GHz contains point-to-point bands at 28, 32, 38 and 42 GHz, potential implementation of 5G at 28 and 39 GHz and various military applications. Traditionally, short gate lengt ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1209044
Description: An accurate scalable 3-D thermal finite-element-method (FEM) model is developed and verified for a GaAs pHEMT process using gate resistance thermometry (GRT) as the basis. The measurement technique is ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195408
Description: Novel and realistic application of hot-via interconnects to millimeter-wave active and power MMICs is demonstrated for the first time. Power amplifier MMICs in the 80- and 100-GHz range were successfu ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195646
Description: The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1044649
Description: A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/361389
Description: The temperature-dependent thermal conductivities of a GaAs pseudomorphic high-electron mobility transistor's (pHEMT) substrate and epilayer regions are extracted to develop a 3-D finite-element-method ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331955
Description: The contributions of gate-connected and source-connected field plates to extracted device capacitances (gate-source, gate-drain and drain-source capacitance) are assessed during the development of an ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/338217
Description: A field effect transistor channel charge partitioning scheme is proposed that explains small-signal port parameters associated with the source and drain terminals. The scheme starts with the channel c ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/336848
Description: This paper presents the results of the measurements of a GaAs Chua's circuit used for a new manufacturing process monitor. The proposed monitoring method is suggested to replace or complement the PCM ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331575
Description: Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity alth ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/319182
Description: The thermal impact of device bias-state and structures (such as source connected field plates, gate-pitch, back-vias, and number of gate fingers) in AlGaN/GaN-on-Si high electron mobility transistors ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: receiver | linearity | GaAs | SiGe | Ka
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1258282
Description: A 30 to 40 GHz receiver fabricated in SiGe is presented. The receiver contains an LO-tripler-amplifier, balanced mixer and LNA. Measured data is presented for the complete receiver and for the LO trip ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/314454
Description: This paper provides the measurement results of the Chua’s circuit manufactured using an InGaAs pHEMT process. The designed circuit was capable of producing both, harmonic and chaotic oscillations. The ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331966
Description: A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flo ... More
Reviewed: Reviewed