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Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/26666
Description: We report passive mode-locking experiments with a novel self-doubling laser crystal Yb:YAl₃BO₃4 (Yb:YAB). The diode-pumped laser was mode locked by an ion-implanted semiconductor saturable absorber mi ... More
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Reviewed: Reviewed
Date: 2001
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/119798
Description: 1 page(s)
Date: 2001
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/119073
Description: We demonstrate an InGaAs single quantum well SESAM for operation around 1060 nm which was manufactured by MOCVD growth and ion-implantation. The results from specular reflectance as well as time resol ... More
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