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Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331575
Description: Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity alth... More
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Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/314454
Description: This paper provides the measurement results of the Chua’s circuit manufactured using an InGaAs pHEMT process. The designed circuit was capable of producing both, harmonic and chaotic oscillations. The... More
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Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267325
Description: A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz... More
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Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198379
Description: A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth.... More
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