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Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/130859
Description: The nature of the apparent band-gap shift in polycrystalline indium nitride thin-films, grown by remote-plasma-enhanced chemical vapour deposition at 535 ± 10 °C, has been investigated separately in r ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/24634
Description: The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show t ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/22954
Description: Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 °C for GaN and between 350 and 570 °C for InN ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44649
Description: The role of point defects related to the presence of excess nitrogen is elucidated for InN thin films grown by different techniques. Elastic recoil detection analysis has shown the presence of excess ... More
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Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/20404
Description: We have observed an “above band-gap” Urbach like characteristic for gallium nitride films (at the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion mass spectroscop ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15195
Description: Considering the interaction of electrons and impurities with interface optical (IO) phonons, the ionization energy of a bound polaron in wurtzite GaN/AlN strained quantum wells (QW’s) is investigated ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15215
Description: We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the M ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30042
Description: The cathodoluminescent and photoluminescent properties of the nanoporous silica frustules of various diatom strains and of natural diatom samples are presented. The spectra are observed to be similar ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30052
Description: Elastic Recoil Detection analysis of different types of indium nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected with a gas ionisation detector featuring a large dete ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30037
Description: It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples gro ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30007
Description: We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7–2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energi ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30032
Description: The novel use of resonant Raman spectroscopy to elucidate the band gap of InN is illustrated in a study of MBE-grown films. This technique can distinguish between electronic transitions related to the ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30027
Description: We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water electrolysis is evident. Electrical properties of the films were also affected. It is suggested t ... More
Reviewed: Reviewed
Authors: Butcher, K. S. A
Date: 2004
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/1236860
Description: In the last two years the semiconducting material indium nitride has come into intense investigation. The development of new generations of nitride based devices are incumbent upon a better understand ... More
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44587
Description: Elastic recoil detection analysis, using an incident beam of 200 MeV Au ions, has been used to measure indium nitride films grown by radio-frequency sputtering. It is shown that the films have nitroge ... More
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Reviewed: Reviewed