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Date: 2003
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/27336
Description: We summaries the status of laser assisted chemical vapour deposition used for growth of GaN films. The principles behind the growth technique are discussed together with the characteristics of the res... More
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/16153
Description: The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to... More
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Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26719
Description: Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layer. The high compliance of the ZnO has allowed r... More
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Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26697
Description: Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525°C - 650°C for growth on sapphire and silicon... More
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Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/40380
Description: Remote plasma enhanced-laser-induced chemical vapor deposition was used to grow gallium nitride films on zinc oxide buffer layers deposited by atomic layer epitaxy on soda lime glass. Freestanding lay... More
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