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Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/82014
Description: This erratum is for an article that appeared in Journal of applied physics, Vol. 90, Issue 12, pg. 6011-6016, and may be found at http://dx.doi.org/10.1063/1.1415363.
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Date: 2001
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/82008
Description: Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the t... More
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