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Title Author/Creator Date Full Text Reviewed
Add Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes Ramelan, A. H; Butcher, K. S. A; Goldys, E. M; Tansley, T. L; Drozdowicz-Tomsia, K 2002 Full Text Reviewed
Add Glass substrates for GaN using ZnO buffer layers Butcher, K. S. A; Afifuddin, A; Chen, Patrick P.-T; Godlewski, M; Szczerbakow, A... More 2002 Full Text Reviewed
Add Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition Afifuddin, A; Butcher, K. S. A; Chen, Patrick P.-T; Goldys, E. M; Tansley, T. L 2002 Full Text Reviewed
Add High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure Wintrebert-Fouquet, M; Butcher, K 2002 — Reviewed
Add Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD Motlan,; Goldys, E. M; Butcher, K. S. A; Tansley, T. L 2002 Full Text Reviewed
Add Atomic layer epitaxy of ZnO for substrates for GaN epitaxy Godlewski, M; Szcerbakow, A; Kopalko, K; Lusakowski, E; Butcher, K. S. A... More 2003 Full Text Reviewed
Add Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions Wintrebert-Fouquet, M 2003 Full Text Reviewed
Add High sensitivity, high resolution X-ray photoelectron analysis on InN Wintrebert-Fouquet, Marie; Butcher, K. Scott A; Motlan, 2003 — Reviewed
Add Optical and electrical properties of InN grown by radio-frequency sputtering Wintrebert-Fouquet, M; Butcher, K. S. A; Motlan, 2003 Full Text Reviewed
Add X-ray photoelectron spectroscopy of Alx Ga1-xSb grown by metalorganic chemical vapour deposition Ramelan, A. H; Butcher, K. S. A; Goldys, E. M 2003 Full Text Reviewed
Add Donor-acceptor pair emission enhancement in mass-transport-grown GaN Paskova, T; Arnaudov, B; Paskov, P. P; Goldys, E. M; Hautakangas, S... More 2005 — Reviewed
Add Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures Drozdowicz-Tomsia, Krystyna; Goldys, Ewa M; Motlan, Motlan; Zareie, Hadi; Phillips, Matthew R 2005 — Reviewed
Add Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition Drozdowicz-Tomsia, K; Goldys, E. M; Fu, Lan; Jagadish, C 2006 — Reviewed
Add Stoichiometry effects and the Moss-Burstein effect for InN Butcher, K. S. A; Hirshy, H; Perks, R. M; Wintrebert-Fouquet, M; Chen, P. P. -T 2006 — Reviewed
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Author/Creator
  • Butcher, K. S. A (8)
  • Goldys, E. M (8)
  • Tansley, T. L (5)
  • Wintrebert-Fouquet, M (4)
  • Motlan, (3)
  • Afifuddin, A (2)
  • Chen, Patrick P.-T (2)
  • Drozdowicz-Tomsia, K (2)
  • Godlewski, M (2)
  • Ramelan, A. H (2)
Subject Keyword
  • gallium compounds (8)
  • gallium arsenide (6)
  • semiconductor growth (6)
  • indium compounds (4)
  • semiconductor epitaxial layers (4)
  • wide band gap semiconductors (4)
  • MOCVD (3)
  • aluminium compounds (3)
  • cathodoluminescence (3)
Resource Type
  • conference paper (9)
  • journal article (5)
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