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Title Author/Creator Date Full Text Reviewed
Add Donor-acceptor pair emission enhancement in mass-transport-grown GaN Paskova, T; Arnaudov, B; Paskov, P. P; Goldys, E. M; Hautakangas, S... More 2005 — Reviewed
Add Atomic layer epitaxy of ZnO for substrates for GaN epitaxy Godlewski, M; Szcerbakow, A; Kopalko, K; Lusakowski, E; Butcher, K. S. A... More 2003 Full Text Reviewed
Add Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions Wintrebert-Fouquet, M 2003 Full Text Reviewed
Add X-ray photoelectron spectroscopy of Alx Ga1-xSb grown by metalorganic chemical vapour deposition Ramelan, A. H; Butcher, K. S. A; Goldys, E. M 2003 Full Text Reviewed
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Author/Creator
  • Goldys, E. M (3)
  • Butcher, K. S. A (2)
  • Arnaudov, B (1)
  • Barski, A (1)
  • Godlewski, M (1)
  • Hautakangas, S (1)
  • Kopalko, K (1)
  • Lusakowski, E (1)
  • Monemar, B (1)
  • Paskov, P. P (1)
Subject Keyword
  • gallium compounds (3)
  • aluminium compounds (2)
  • gallium arsenide (2)
  • semiconductor growth (2)
  • wide band gap semiconductors (2)
  • MOCVD (1)
  • X-ray photoelectron spectra (1)
  • atomic layer epitaxial growth (1)
Resource Type
  • conference paper (3)
  • journal article (1)
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semiconductor epitaxial layers
III-V semiconductors

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