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| Title | Author/Creator | Date | Full Text | Reviewed | |
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| Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition | Drozdowicz-Tomsia, K; Goldys, E. M; Fu, Lan; Jagadish, C | 2006 | — | 
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| Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions | Wintrebert-Fouquet, M | 2003 |
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| Optical and electrical properties of InN grown by radio-frequency sputtering | Wintrebert-Fouquet, M; Butcher, K. S. A; Motlan, | 2003 |
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| High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure | Wintrebert-Fouquet, M; Butcher, K | 2002 | — |
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Author/Creator
- Wintrebert-Fouquet, M (3)
- Butcher, K (1)
- Butcher, K. S. A (1)
- Drozdowicz-Tomsia, K (1)
- Fu, Lan (1)
- Goldys, E. M (1)
- Jagadish, C (1)
- Motlan, (1)
Subject Keyword
- gallium arsenide (3)
- semiconductor growth (3)
- aluminium compounds (2)
- resonant tunnelling (2)
- Hall effect (1)
- MOCVD (1)
- X-ray diffraction (1)
- atomic force microscopy (1)
Resource Type
- conference paper (2)
- journal article (2)
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