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| Title | Author/Creator | Date | Full Text | Reviewed | |
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| Atomic layer epitaxy of ZnO for substrates for GaN epitaxy | Godlewski, M; Szcerbakow, A; Kopalko, K; Lusakowski, E; Butcher, K. S. A... More | 2003 | 
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| Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes | Ramelan, A. H; Butcher, K. S. A; Goldys, E. M; Tansley, T. L; Drozdowicz-Tomsia, K | 2002 |
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| Glass substrates for GaN using ZnO buffer layers | Butcher, K. S. A; Afifuddin, A; Chen, Patrick P.-T; Godlewski, M; Szczerbakow, A... More | 2002 |
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| Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition | Afifuddin, A; Butcher, K. S. A; Chen, Patrick P.-T; Goldys, E. M; Tansley, T. L | 2002 |
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| Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD | Motlan,; Goldys, E. M; Butcher, K. S. A; Tansley, T. L | 2002 |
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Author/Creator
- Afifuddin, A (2)
- Chen, Patrick P.-T (2)
- Godlewski, M (2)
- Barski, A (1)
- Drozdowicz-Tomsia, K (1)
- Freitas, J. A (1)
- Kopalko, K (1)
Subject Keyword
- MOCVD coatings (2)
- gallium arsenide (2)
- laser deposition (2)
- plasma CVD (2)
- wide band gap semiconductors (2)
- zinc compounds (2)
- Hall effect (1)
- Hall mobility (1)
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