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Title Author/Creator Date Full Text Reviewed
Add Stoichiometry effects and the Moss-Burstein effect for InN Butcher, K. S. A; Hirshy, H; Perks, R. M; Wintrebert-Fouquet, M; Chen, P. P. -T 2006 — Reviewed
Add Atomic layer epitaxy of ZnO for substrates for GaN epitaxy Godlewski, M; Szcerbakow, A; Kopalko, K; Lusakowski, E; Butcher, K. S. A... More 2003 Full Text Reviewed
Add Optical and electrical properties of InN grown by radio-frequency sputtering Wintrebert-Fouquet, M; Butcher, K. S. A; Motlan, 2003 Full Text Reviewed
Add X-ray photoelectron spectroscopy of Alx Ga1-xSb grown by metalorganic chemical vapour deposition Ramelan, A. H; Butcher, K. S. A; Goldys, E. M 2003 Full Text Reviewed
Add Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes Ramelan, A. H; Butcher, K. S. A; Goldys, E. M; Tansley, T. L; Drozdowicz-Tomsia, K 2002 Full Text Reviewed
Add Glass substrates for GaN using ZnO buffer layers Butcher, K. S. A; Afifuddin, A; Chen, Patrick P.-T; Godlewski, M; Szczerbakow, A... More 2002 Full Text Reviewed
Add Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition Afifuddin, A; Butcher, K. S. A; Chen, Patrick P.-T; Goldys, E. M; Tansley, T. L 2002 Full Text Reviewed
Add Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD Motlan,; Goldys, E. M; Butcher, K. S. A; Tansley, T. L 2002 Full Text Reviewed
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  • Goldys, E. M (6)
  • Tansley, T. L (5)
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  • Godlewski, M (2)
  • Motlan, (2)
  • Ramelan, A. H (2)
  • Wintrebert-Fouquet, M (2)
  • Barski, A (1)
Subject Keyword
  • gallium compounds (6)
  • semiconductor growth (3)
  • wide band gap semiconductors (3)
  • Hall effect (2)
  • MOCVD coatings (2)
  • X-ray diffraction (2)
  • gallium arsenide (2)
  • laser deposition (2)
  • optical films (2)
Resource Type
  • conference paper (7)
  • journal article (1)
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Butcher, K. S. A
III-V semiconductors

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