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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206785
Description: In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207009
Description: In this letter, we model future generation SiGe FinFETs using the industry standard compact model BSIM-CMG. BSIM-CMG is enhanced to model these aggressively scaled devices. It is found that in these n ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: germanium | FinFETs | BSIM-CMG | compact models
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206975
Description: In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model. The effect of perpendicu ... More
Reviewed: Reviewed
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