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Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208297
Description: In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole-Frenkel emission are t ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208318
Description: We present an accurate and robust surface-potential-based compact model for simulation of circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs). An accurate analytical surfac ... More
Reviewed: Reviewed
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