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Date: 2017
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207300
Description: A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spa ... More
Reviewed: Reviewed
Date: 2017
Subject Keyword: compact model | halo | transconductance
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1210928
Description: In this paper, we report anomalous behavior of transconductance(gm) in halo implanted MOSFET for linear and saturation regions across both gate and body biases. The gm characteristics undergo sharp ch ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207197
Description: In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential base ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | halo doping | flicker noise | compact model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211315
Description: An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to sig ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207009
Description: In this letter, we model future generation SiGe FinFETs using the industry standard compact model BSIM-CMG. BSIM-CMG is enhanced to model these aggressively scaled devices. It is found that in these n ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208297
Description: In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole-Frenkel emission are t ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: analog | BSIM4 | BSIM6 | compact model | RF
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207494
Description: BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4 ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207486
Description: In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have impr ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208318
Description: We present an accurate and robust surface-potential-based compact model for simulation of circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs). An accurate analytical surfac ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206817
Description: A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate th ... More
Reviewed: Reviewed
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