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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207273
Description: We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation. The subsurface leakage current is mainly caused by source-drain coupling, leading to carriers surm ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | MOSFET | SPICE | threshold voltage
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211156
Description: In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | halo doping | flicker noise | compact model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211315
Description: An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to sig ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206766
Description: We enhance the capability of industry standard compact model BSIM6 to model the parasitic current Iedge at the shallow trench isolation edge. Accurate, efficient, and scalable model for Iedge is devel ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: analog | BSIM4 | BSIM6 | compact model | RF
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207494
Description: BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4 ... More
Reviewed: Reviewed
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