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Date: 2017
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207300
Description: A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spa ... More
Reviewed: Reviewed
Date: 2017
Subject Keyword: compact model | halo | transconductance
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1210928
Description: In this paper, we report anomalous behavior of transconductance(gm) in halo implanted MOSFET for linear and saturation regions across both gate and body biases. The gm characteristics undergo sharp ch ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207708
Description: We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207727
Description: In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelec ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208216
Description: In this paper, a surface-potential-based compact model is proposed for the capacitance of an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, i.e., with gate and sou ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208250
Description: In this paper, we have proposed a new analytical model for FETs working in the quasi-ballistic regime. The model is based on a calculation of the charge density along the channel which is then used to ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219614
Description: In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207273
Description: We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation. The subsurface leakage current is mainly caused by source-drain coupling, leading to carriers surm ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206756
Description: We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg = 100 nm ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207197
Description: In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential base ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206785
Description: In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | MOSFET | SPICE | threshold voltage
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211156
Description: In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | halo doping | flicker noise | compact model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211315
Description: An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to sig ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207471
Description: We present a physics-based model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacit ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207009
Description: In this letter, we model future generation SiGe FinFETs using the industry standard compact model BSIM-CMG. BSIM-CMG is enhanced to model these aggressively scaled devices. It is found that in these n ... More
Reviewed: Reviewed