Macquarie University, Sydney Macquarie University ResearchOnline

Showing items 1 - 15 of 21.

Add to Quick Collection   All 21 Results

Sort:
 Add All Items to Quick Collection
Date: 2017
Subject Keyword: compact model | halo | transconductance
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1210928
Description: In this paper, we report anomalous behavior of transconductance(gm) in halo implanted MOSFET for linear and saturation regions across both gate and body biases. The gm characteristics undergo sharp ch ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207708
Description: We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207727
Description: In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelec ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208216
Description: In this paper, a surface-potential-based compact model is proposed for the capacitance of an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, i.e., with gate and sou ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208250
Description: In this paper, we have proposed a new analytical model for FETs working in the quasi-ballistic regime. The model is based on a calculation of the charge density along the channel which is then used to ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219614
Description: In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207273
Description: We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation. The subsurface leakage current is mainly caused by source-drain coupling, leading to carriers surm ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207197
Description: In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential base ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | halo doping | flicker noise | compact model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211315
Description: An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to sig ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207471
Description: We present a physics-based model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacit ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206766
Description: We enhance the capability of industry standard compact model BSIM6 to model the parasitic current Iedge at the shallow trench isolation edge. Accurate, efficient, and scalable model for Iedge is devel ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: HEMT | noise model | thermal noise
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219639
Description: In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface po ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208297
Description: In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole-Frenkel emission are t ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: analog | BSIM4 | BSIM6 | compact model | RF
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207494
Description: BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4 ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: HEMT | flicker noise | noise model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211656
Description: In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier numbe ... More
Reviewed: Reviewed