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Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/269872
Description: Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated switching power converters. Pulsed IV characterization of GaN FETs revealed ON resistance dependence ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267380
Description: Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables high ... More
Reviewed: Reviewed
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