Modeling HEMT intermodulation distortion characteristics | Macquarie University ResearchOnline

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Title: Modeling HEMT intermodulation distortion characteristics
Related: Microelectronics journal, Vol. 31, No. 7 (2000), p.493-496
DOI: 10.1016/S0026-2692(00)00021-5
Publisher: Elsevier
Date: 2000
Author/Creator: Qu, G
Author/Creator: Parker, A. E
Description: The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, are shown to exhibit almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for the successful circuit simulation.
Description: 4 page(s)
Subject Keyword: High electron mobility transistors
Subject Keyword: Intermodulation distortion
Subject Keyword: Nonlinear capacitance models
Subject Keyword: HEMT
Resource Type: journal article
Organisation: Macquarie University. Dept. of Electronic Engineering

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