Erratum : 'Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates' [J. Appl. Phys. 90, 6011 (2001)] | Macquarie University ResearchOnline

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Title: Erratum : 'Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates' [J. Appl. Phys. 90, 6011 (2001)]
Related: Journal of applied physics, Vol. 91, Issue 10, p.6778-
DOI: 10.1063/1.1471940
Publisher: American Institute of Physics
Date: 2002
FoR/RFCD Code(s): 091203 Compound Semiconductors
Author/Creator: Valcheva, E
Author/Creator: Paskova, T
Author/Creator: Abrashev, M. V
Author/Creator: Paskov, P. P
Author/Creator: Persson, P. O. Å
Author/Creator: Goldys, E. M
Author/Creator: Beccard, R
Author/Creator: Heuken, M
Author/Creator: Monemar, B
Description: This erratum is for an article that appeared in Journal of applied physics, Vol. 90, Issue 12, pg. 6011-6016, and may be found at http://dx.doi.org/10.1063/1.1415363.
Description: 1 page(s)
Subject Keyword: 091203 Compound Semiconductors
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

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