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-List Of Titles -Elimination of nonuniformities in thick GaN films using metalorganic chemical vapour deposited GaN templates

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/82008

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Title
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapour deposited GaN templates
Related
Journal of applied physics, Vol. 90, Issue 12, p.6011-6016
DOI
10.1063/1.1415363
Publisher
American Institute of Physics
Date
2001
FoR/RFCD Code(s)
091203 Compound Semiconductors
Author/Creator
Valcheva, E
Author/Creator
Paskova, T
Author/Creator
Abrashev, M. V
Author/Creator
Paskov, P. P
Author/Creator
Persson, P. O. Å
Author/Creator
Goldys, E. M
Author/Creator
Beccard, R
Author/Creator
Heuken, M
Author/Creator
Monemar, B
Description
Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the template on the strain relaxation and spatial distribution of free carriers in the overgrown GaN films. Spatially resolved cross-sectional micro-Raman spectroscopy, cathodoluminescence, and transmission electron microscopy show improved crystalline quality for growth on metalorganic chemical vapor deposited GaN templates. The highly doped and highly defective near-substrate layer composed of columnar domains, typically present in hydride vapor phase epitaxial GaN films grown directly on sapphire, is absent in the layers grown on templates. Consequently, this results in elimination of the nonuniformities of free electron distribution, a lower residual free carrier concentration (<10¹⁷ cm⁻³), and improved strain relaxation. An erratum for this article appeared in Journal of applied physics, Vol. 90, Issue 12, pg. 6011-6016, and may be found at http://dx.doi.org/10.1063/1.1471940.
Description
6 page(s)
Subject Keyword
091203 Compound Semiconductors
Resource Type
journal article
Organisation
Macquarie University. Dept. of Physics

Identifier
http://hdl.handle.net/1959.14/82008
Identifier
ISSN:1089-7550
Identifier
mq-rm-2001013395
Language
eng
Reviewed
Reviewed
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Citation Format
E-mail Address
Subject
"Journal of applied physics"
 
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