Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition | Macquarie University ResearchOnline

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Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/47442

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Title: Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
Related: Applied physics letters, Vol. 89, Issue 11, p.113510-1-113510-3
DOI: 10.1063/1.2354432
Publisher: American Institute of Physics
Date: 2006
Author/Creator: Drozdowicz-Tomsia, K
Author/Creator: Goldys, E. M
Author/Creator: Fu, Lan
Author/Creator: Jagadish, C
Description: Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.
Description: NaN page(s)
Subject Keyword: indium compounds
Subject Keyword: gallium arsenide
Subject Keyword: self-assembly
Subject Keyword: semiconductor growth
Subject Keyword: semiconductor doping
Subject Keyword: resonant tunnelling
Subject Keyword: silicon
Subject Keyword: III-V semiconductors
Subject Keyword: semiconductor quantum dots
Subject Keyword: elemental semiconductors
Subject Keyword: photodetectors
Subject Keyword: infrared detectors
Subject Keyword: dark conductivity
Subject Keyword: MOCVD
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

Identifier: http://hdl.handle.net/1959.14/47442
Identifier: ISSN:1077-3118
Identifier: mq-rm-2006002703
Language: eng
Rights: Publisher PDF allowed as per publisher agreement.
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