Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures | Macquarie University ResearchOnline

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Title: Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures
Related: Applied physics letters, Vol. 86, Issue 17, p.173113-1-173113-3
DOI: 10.1063/1.1920418
Publisher: American Institute of Physics
Date: 2005
Author/Creator: Drozdowicz-Tomsia, Krystyna
Author/Creator: Goldys, Ewa M
Author/Creator: Motlan, Motlan
Author/Creator: Zareie, Hadi
Author/Creator: Phillips, Matthew R
Description: Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.
Description: 3 page(s)
Subject Keyword: gallium compounds
Subject Keyword: gallium arsenide
Subject Keyword: III-V semiconductors
Subject Keyword: semiconductor quantum dots
Subject Keyword: multilayers
Subject Keyword: MOCVD
Subject Keyword: semiconductor growth
Subject Keyword: cathodoluminescence
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

Macquarie University ResearchOnline