Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN | Macquarie University ResearchOnline

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Title: Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN
Related: Physical review B. Condensed matter and materials physics, Vol. 64, Issue 4, p.045213-1-045213-12
DOI: 10.1103/PhysRevB.64.045213
Publisher: American Physical Society
Date: 2001
Author/Creator: Arnaudov, B
Author/Creator: Paskova, T
Author/Creator: Goldys, E. M
Author/Creator: Evtimova, S
Author/Creator: Monemar, B
Description: We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5×10¹⁷-1×10²⁰cm⁻³. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.
Description: 12 page(s)
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

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