Modeling 20-nm Germanium FinFET with the industry standard FinFET model

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Title: Modeling 20-nm Germanium FinFET with the industry standard FinFET model
Related: IEEE electron device letters, Vol. 35, No. 7, (2014), p.711-713
DOI: 10.1109/LED.2014.2323956
Publisher: IEEE
Date: 2014
Author/Creator: Khandelwal, Sourabh
Author/Creator: Duarte, Juan Pablo
Author/Creator: Chauhan, Yogesh Singh
Author/Creator: Hu, Chenming
Description: In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model. The effect of perpendicular electrical field on hole mobility in germanium FinFETs is found to be different from silicon FinFETs. We present an updated Ge mobility equation to account for this difference. With this single update, BSIM-CMG agrees very well with the measured I-V data of Ge FinFETs with a gate-length from 130 to 20 nm. We conclude that a production quality standard model is available for simulation of circuits employing p-type Ge FinFET
Description: 3 page(s)
Subject Keyword: germanium
Subject Keyword: FinFETs
Subject Keyword: BSIM-CMG
Subject Keyword: compact models
Resource Type: journal article
Organisation: Macquarie University. Department of Engineering

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