Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride | Macquarie University ResearchOnline

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Title: Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride
Related: Physica status solidi. C, Vol. 0, Issue 1, p.373-376
DOI: 10.1002/pssc.200390066
Publisher: Wiley
Date: 2003
FoR/RFCD Code(s): 030303 Optical Properties of Materials 091203 Compound Semiconductors
Author/Creator: Butcher, K. S. A
Author/Creator: Dou, H
Author/Creator: Goldys, E. M
Author/Creator: Tansley, T. L
Author/Creator: Srikeaw, S
Description: UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.
Description: 4 page(s)
Subject Keyword: 030303 Optical Properties of Materials
Subject Keyword: 091203 Compound Semiconductors
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

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