Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/30718
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- Title
- Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
- Related
- Physica status solidi. C, Vol. 2, Issue 3, p.1056-1059
- DOI
- 10.1002/pssc.200460619
- Publisher
- WILEY-VCH Verlag GmbH and Co. KGaA
- Date
- 2005
- Author/Creator
- Godlewski, M
- Author/Creator
- Ivanov, V. Yu
- Author/Creator
- Böttcher, T
- Author/Creator
- Figge, S
- Author/Creator
- Hommel, D
- Author/Creator
- Łusakowska, E
- Author/Creator
- Bożek, R
- Author/Creator
- Miasojedovas, S
- Author/Creator
- Juršėnas, S
- Author/Creator
- Kazlauskas, K
- Author/Creator
- Žukauskas, A
- Author/Creator
- Goldys, E. M
- Author/Creator
- Phillips, M. R
- Description
- Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.
- Description
- 4 page(s)
- Subject Keyword
- impurity concentration
- Subject Keyword
- impurity distribution
- Subject Keyword
- impurity gradients
- Subject Keyword
- doping and impurity implantation
- Subject Keyword
- atomic force microscopy (AFM)
- Subject Keyword
- cathodoluminescence
- Subject Keyword
- ionoluminescence
- Subject Keyword
- quantum wells
- Resource Type
- journal article
- Organisation
- Macquarie University. Dept. of Physics
- Identifier
- http://hdl.handle.net/1959.14/30718
- Identifier
- ISSN:1610-1642
- Identifier
- mq-rm-2005003983
- Language
- eng
- Reviewed
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