X-ray photoelectron spectroscopy of Alx Ga1-xSb grown by metalorganic chemical vapour deposition | Macquarie University ResearchOnline

Home

List Of Titles

X-ray photoelectron spectroscopy of Alx Ga1-xSb grown by metalorganic chemical vapour deposition

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/27110

63 Visitors

74 Hits

3 Downloads

File	Description	Size	Format
DS01	Publisher version (open access)	208 KB	Adobe Acrobat PDF	View/Open

Title: X-ray photoelectron spectroscopy of Alx Ga1-xSb grown by metalorganic chemical vapour deposition
Related: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2002) (11 - 13 December 2002 : Sydney)
Related: Gal, Michael. Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices, p.149-152
DOI: 10.1109/COMMAD.2002.1237214
Publisher: Piscataway, NJ : IEEE
Date: 2003
Author/Creator: Ramelan, A. H
Author/Creator: Butcher, K. S. A
Author/Creator: Goldys, E. M
Description: The extent of oxidation and growth derived oxygen contamination for Al₀.₀₅Ga₀.₉₅Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d₅/₂ and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al₂2O₃, Sb₂O₂ and Ga₂O₅) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al₀.₀₅Ga₀.₉₅Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.
Description: 4 page(s)
Subject Keyword: III-V semiconductors
Subject Keyword: MOCVD
Subject Keyword: X-ray photoelectron spectra
Subject Keyword: aluminium compounds
Subject Keyword: gallium compounds
Subject Keyword: optical films
Subject Keyword: secondary ion mass spectra
Subject Keyword: semiconductor epitaxial layers
Subject Keyword: semiconductor growth
Resource Type: conference paper
Organisation: Macquarie University. Dept. of Physics

Identifier: http://hdl.handle.net/1959.14/27110
Identifier: ISBN:0780375718
Identifier: ISSN:1097-2137
Identifier: mq-rm-2003018384
Language: eng
Rights: Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
Full Text
Reviewed

Macquarie University ResearchOnline

Search

Browse

Highlights

Resources