The Low Temperature Nitride Growth Facility has been formed with the goal of developing novel growth and analysis techniques that may be suitable for the growth of group III nitride materials at temperatures below 650°C. The new growth facility includes three thin film growth reactors, a separate clean room facility, and a plethora of characterisation and device fabrication tools. This paper will outline the present status of the facility but will also highlight some of the recent work by the facilities staff. This includes, the development of an AFM based piezoelectric measurement system; the development of sub-growth temperature re-crystallisation techniques for the improvement of low temperature grown gallium nitride; progress in the development of indium nitride – a material pioneered in Australia. What is the band-gap of indium nitride? Is it 0.7 eV or is it 1.89 eV? And finally the development of ultra-high resistivity aluminium nitride layers grown at room temperature is reviewed.