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Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/27024

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Title: Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions
Related: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2002) (11 - 13 December 2002 : Sydney)
Related: Gal, Michael. Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices, p.499-502
DOI: 10.1109/COMMAD.2002.1237299
Publisher: Piscataway, NJ : IEEE
Date: 2003
Author/Creator: Wintrebert-Fouquet, M
Description: An InP/ln₀.₅₃Ga₀.₄₇As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In₀.₅₃Ga₀.₄₇As/AIAs resonant tunnelling diode which achieves a current density of 15 kA/cm² at a peak voltage of 1.6 V for a peak-to-valley ratio of 39:1 is integrated at the emitter of a double heterojunctiou InGaAs/lnP bipolar transistor. Results are presented for 3 µm x 3 µm emitter sue integrated device. A negative differential shape due to the resonant tunnelling effect at the emitter controlled by a 3.4 µA base current is observed in the common-eminer current-voltage characteristics at room temperature with a current density of 9.2 kA/cm² and a peak-to-valley ratio of 12:1. The maximum current gain of the device is 220. However beyond the resonant tunnelling peak, the resonant tunnelling transistor presents a histability where the collector current collapses dramatically, the transistor characteristics are recovered by increasing the collector-emitter voltage.
Description: 4 page(s)
Subject Keyword: III-V semiconductors
Subject Keyword: aluminium compounds
Subject Keyword: gallium arsenide
Subject Keyword: heterojunction bipolar transistors
Subject Keyword: indium compounds
Subject Keyword: molecular beam epitaxial growth
Subject Keyword: resonant tunnelling diodes
Subject Keyword: resonant tunnelling transistors
Subject Keyword: semiconductor epitaxial layers
Subject Keyword: semiconductor growth
Resource Type: conference paper
Organisation: Macquarie University. Dept. of Physics

Identifier: http://hdl.handle.net/1959.14/27024
Identifier: ISBN:0780375718
Identifier: ISSN:1097-2137
Identifier: mq-rm-2003017881
Language: eng
Rights: Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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