Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/27013
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- Title
- Optical and electrical properties of InN grown by radio-frequency sputtering
- Related
- Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2002) (11 - 13 December 2002 : Sydney)
- Related
- Gal, Michael. Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices, p.83-86
- DOI
- 10.1109/COMMAD.2002.1237198
- Publisher
- Piscataway, NJ : IEEE
- Date
- 2003
- Author/Creator
- Wintrebert-Fouquet, M
- Author/Creator
- Butcher, K. S. A
- Author/Creator
- Motlan,
- Description
- InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased dramatically, however Australia remains a pioneering research force in this area. In this paper, we present our latest results on the optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of an In target with pure nitrogen gas. A new aspect of target conditioning is identified as an important growth parameter. A series of samples were grown with different thickness under optimized growth conditions. Films were characterised by X-ray diffraction, atomic force microscopy and Hall measurements. Optical measurements show that films have band gap values close to 2 eV. A comparative study of the optical and electrical properties is reported after removing 100 to 200 nm of the film surface by reactive ion etching.
- Description
- 4 page(s)
- Subject Keyword
- Hall effect
- Subject Keyword
- III-V semiconductors
- Subject Keyword
- sputter etching
- Subject Keyword
- wide band gap semiconductors
- Subject Keyword
- X-ray diffraction
- Subject Keyword
- atomic force microscopy
- Subject Keyword
- indium compounds
- Subject Keyword
- optical films
- Subject Keyword
- optical variables measurement
- Subject Keyword
- semiconductor growth
- Subject Keyword
- semiconductor thin films
- Subject Keyword
- sputter deposition
- Resource Type
- conference paper
- Organisation
- Macquarie University. Dept. of Physics
- Identifier
- http://hdl.handle.net/1959.14/27013
- Identifier
- ISBN:0780375718
- Identifier
- ISSN:1097-2137
- Identifier
- mq-rm-2003017878
- Language
- eng
- Rights
- Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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