Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD | Macquarie University ResearchOnline

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Title: Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD
Related: Journal of crystal growth, Vol. 236, Issue 4, p.621-626
DOI: 10.1016/S0022-0248(02)00845-X
Publisher: Elsevier
Date: 2002
Author/Creator: Motlan,
Author/Creator: Goldys, E. M
Author/Creator: Tansley, T. L
Description: Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of the dots can be controlled by growth temperature, growth time and the dilution of the growth precursors. The dot width of 40 nm, the height of 4 nm and the density in the order of 10¹⁰ cm⁻² can be achieved. These results are comparable with GaSb/GaAs QDs grown by molecular beam epitaxy.
Description: 6 page(s)
Subject Keyword: A3. Metalorganic chemical vapor epitaxy
Subject Keyword: A3. Quantum dots
Subject Keyword: A3. Self-assembled growth
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

Macquarie University ResearchOnline