The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.
Copyright 2006 IEEE. Reprinted from 2006 International conference on nanoscience and nanotechnology : proceedings. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to firstname.lastname@example.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.