Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/26719
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- Title
- Glass substrates for GaN using ZnO buffer layers
- Related
- Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2000) (6 - 8 December 2000 : Bundoora, VIC)
- Related
- Broekman, Leonard; Usher, Brian and Riley, John. Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices, p.535-538
- DOI
- 10.1109/COMMAD.2000.1023005
- Publisher
- Danvers, USA : IEEE
- Date
- 2002
- Author/Creator
- Butcher, K. S. A
- Author/Creator
- Afifuddin, A
- Author/Creator
- Chen, Patrick P.-T
- Author/Creator
- Godlewski, M
- Author/Creator
- Szczerbakow, A
- Author/Creator
- Goldys, E. M
- Author/Creator
- Tansley, T. L
- Author/Creator
- Freitas, J. A
- Description
- Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layer. The high compliance of the ZnO has allowed relatively thick layers of 5-10 microns to be produced on these inexpensive substrate materials. These were subsequently processed into free standing layers. Hall mobilities have been measured for N-type GaN deposited on the ZnO buffered glass substrates, with the results equalling the highest values obtained by others using MBE and high purity silica substrates.
- Description
- 4 page(s)
- Subject Keyword
- Hall mobility
- Subject Keyword
- II-VI semiconductors
- Subject Keyword
- III-V semiconductors
- Subject Keyword
- gallium compounds
- Subject Keyword
- laser deposition
- Subject Keyword
- plasma CVD
- Subject Keyword
- substrates
- Subject Keyword
- zinc compounds
- Resource Type
- conference paper
- Organisation
- Macquarie University. Dept. of Physics
- Identifier
- http://hdl.handle.net/1959.14/26719
- Identifier
- ISBN:0780366980
- Identifier
- ISSN:1097-2137
- Identifier
- mq-rm-2002015478
- Language
- eng
- Rights
- Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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