Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/26687
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- Title
- Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes
- Related
- Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2000) (6 - 8 December 2000 : Bundoora, VIC)
- Related
- Broekman, Leonard; Usher, Brian and Riley, John. Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices, p.125-128
- Related
- http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1022907&isnumber=22012
- Publisher
- Danvers, USA : IEEE
- Date
- 2002
- Author/Creator
- Ramelan, A. H
- Author/Creator
- Butcher, K. S. A
- Author/Creator
- Goldys, E. M
- Author/Creator
- Tansley, T. L
- Author/Creator
- Drozdowicz-Tomsia, K
- Description
- Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers and Au-Ge-Ni as Ohmic contact. Doping densities of about 4.1x10¹⁸ cm⁻³ and barrier heights of 0.63 eV are found from C-V measurements, compared to 0.59 eV determined from room temperature I-V measurements. Room temperature ideality factors are around 1.3, while its variation with temperature demonstrates the role of electron tunnelling through the depletion barrier. The carrier concentration probed by C-V is confirmed by van der Pauw Hall measurements. The effect of thermal annealing on the diodes is also reported.
- Description
- 4 page(s)
- Subject Keyword
- Hall effect
- Subject Keyword
- III-V semiconductors
- Subject Keyword
- MOCVD coatings
- Subject Keyword
- Schottky diodes
- Subject Keyword
- gallium compounds
- Subject Keyword
- semiconductor epitaxia
- Subject Keyword
- tellurium
- Resource Type
- conference paper
- Organisation
- Macquarie University. Dept. of Physics
- Identifier
- http://hdl.handle.net/1959.14/26687
- Identifier
- ISBN:0780366980
- Identifier
- ISSN:1097-2137
- Identifier
- mq-rm-2002015473
- Language
- eng
- Rights
- Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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