Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/198379
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- Title
- Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier
- Related
- IEEE Compound Semiconductor Integrated Circuit Symposium (14 - 17 October 2012 : La Jolla, CA)
- Related
- Technical digest : IEEE Compound Semiconductor Integrated Circuit Symposium : CSICS 2012, p.1-4
- DOI
- 10.1109/CSICS.2012.6340084
- Publisher
- Piscataway, NJ : IEEE
- Date
- 2012
- Author/Creator
- Rodriguez, Melissa C
- Author/Creator
- Tarazi, Jabra
- Author/Creator
- Harvey, James T
- Author/Creator
- Parker, Anthony E
- Author/Creator
- Heimlich, Michael C
- Author/Creator
- Wang, Wen-Kai
- Author/Creator
- Dadello, Anna
- Author/Creator
- Convert, Emmanuelle R. O
- Author/Creator
- McCulloch, MacCrae G
- Author/Creator
- Mahon, Simon J
- Author/Creator
- Hwang, Steve
- Author/Creator
- Mould, Rodney G
- Author/Creator
- Fattorini, Anthony P
- Author/Creator
- Young, Alan C
- Description
- A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.
- Description
- 4 page(s)
- Resource Type
- conference paper
- Organisation
- Macquarie University. Dept. of Electronic Engineering
- Identifier
- http://hdl.handle.net/1959.14/198379
- Identifier
- ISBN:9781467309288
- Identifier
- ISSN:1550-8781
- Identifier
- mq-rm-2011010387
- Identifier
- mq_res-ext-ieee201211281230-21
- Language
- eng
- Reviewed
