A novel measurement of the dynamics of high electron-mobility transistor (HEMT) and MESFET behavior permits classification of rate-dependence mechanisms and identification of operating regions that they affect. This reveals a simple structure to the otherwise complicated behavior that has concerned circuit designers. Heating, impact ionization, and trapping contribute to transient behavior through rate-dependence mechanisms. These are illustrated by a simple description. Each has an effect on specific regions of bias and operating frequency. With this insight, it is possible to determine true isodyamic characteristics of HEMTs and MESFETs and to predict operating conditions that will or will not be affected by rate dependence. It is interesting to note that, for some devices, rate dependence can be seen to exist at microwave frequencies and may, therefore, contribute to intermodulation distortion.
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