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Title: Measurement and characterization of HEMT dynamics
Related: IEEE transactions on microwave theory and techniques, Vol. 49, Issue 11, p.2105-2111
DOI: 10.1109/22.963144
Publisher: Institute of Electrical Electronics Engineers
Date: 2001
Author/Creator: Parker, Anthony E
Author/Creator: Rathmell, James Grantley
Description: The variation of high electron-mobility transistor (HEMT) large-signal behavior with a change in operating condition is examined with a view to understanding the dynamics involved and developing a modeling strategy. The observed variation exhibits the dynamics of thermal, impact ionization, and trapping effects. A novel measurement of drain characteristic transients gives time-evolution information that clearly shows these as separate quantifiable phenomena with significant dependence on initial operating conditions. A drain-current model that describes high-frequency characteristics with pinchoff, gain, and drain feedback parameters is adapted to describe the variation of the characteristics with changing operating conditions. The results reported give insight and grounding for simulation of HEMT circuits.
Description: 7 page(s)
Subject Keyword: HEMTs
Subject Keyword: high-speed devices
Subject Keyword: impact ionization
Subject Keyword: kink effect
Subject Keyword: pulsed characterization
Resource Type: journal article
Organisation: Macquarie University. Dept. of Electronics

Identifier: http://hdl.handle.net/1959.14/17218
Identifier: ISSN:0018-9480
Identifier: mq-rm-2001012428
Language: eng
Rights: Copyright 2001 IEEE. Reprinted from IEEE transactions on microwave theory and techniques. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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