The characteristics of each unit cell in a linearly scaled distributed HEMT model is analyzed. This provides insight into the internal behavior of any region of a whole device and hence guides optimization of device geometry and metallization according to need. The linear relationship between drain current and device widths are explained using the unit cell drain current. This is useful to predict the drain current characteristics for unmeasured device geometry. The effects of manifold on gain-bandwidth product of multi-finger devices for various widths are also presented by applying the linear model. This analysis explores the optimum width and number of fingers of a device to reduce the internal loss of a multi-fingered device.