Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/180346
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- Title
- Steady state and transient thermal analyses of GaAs pHEMT devices
- Related
- IEEE Wireless and Microwave Technology Conference (13th : 2012) (15 - 17 April 2012 : Cocoa Beach, Florida)
- Related
- WAMICON 2012 IEEE Wireless and Microwave Technology Conference : proceedings : 15-17 April 2012, Cocoa Beach, Florida, USA, p.1-7
- DOI
- 10.1109/WAMICON.2012.6208438
- Publisher
- Piscataway, N.J : IEEE
- Date
- 2012
- Author/Creator
- Schwitter, Bryan K
- Author/Creator
- Heimlich, Michael C
- Author/Creator
- Fattorini, Anthony P
- Author/Creator
- Tarazi, Jabra
- Description
- GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Finite Element Method (FEM) thermal simulations are compared with measurements and used to investigate the frequency response of device self-heating. Comparisons are made with existing thermal models. The influence of individual device structures on the thermal characteristics of an entire device is investigated and the epitaxial layers are seen to have a large impact on overall performance. Bias dependent self-heating, independent of thermal dissipation is observed and attributed to confinement of the thermal source as the drain voltage is increased.
- Description
- 7 page(s)
- Subject Keyword
- pHEMT channel
- Subject Keyword
- temperature
- Subject Keyword
- temperature measurement
- Subject Keyword
- thermal modeling
- Subject Keyword
- Thermal test structure
- Subject Keyword
- wafer level
- Resource Type
- conference paper
- Organisation
- Macquarie University. Dept. of Electronic Engineering
- Identifier
- http://hdl.handle.net/1959.14/180346
- Identifier
- ISBN:9781467301299
- Identifier
- mq_res-ext-2-s2.0-84863614542
- Language
- eng
- Reviewed
