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A Scalable linear model for FETs

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/167699

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Title: A Scalable linear model for FETs
Related: IEEE MTT-S International Microwave Symposium (5 - 10 June 2011 : Baltimore, MD)
Related: IEEE MTT-S International Microwave Symposium Digest, p.1-4
DOI: 10.1109/MWSYM.2011.5972767
Publisher: Piscataway, N.J : IEEE
Date: 2011
Author/Creator: Tarazi, Jabra
Author/Creator: Mahon, Simon J
Author/Creator: Fattorini, Anthony P
Author/Creator: Heimlich, Michael C
Author/Creator: Parker, Anthony E
Description: A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter terms. The addition of a fourth capacitance rather than a channel resistance or delay term enables extraction of dispersion-free parameters, better consistency with a large-signal model and better scaling properties. An important aspect of the model topology is clear separation of resistive and reactive elements so that transconductance and output conductance correspond to real parts of the Y -parameters. It is shown that this has an impact on the scaling of noise models that are formulated in terms of these resistive parameters.
Description: 4 page(s)
Subject Keyword: FET scaling
Subject Keyword: HEMTs
Subject Keyword: Noise parameters
Subject Keyword: semiconductor device modeling
Resource Type: conference paper
Organisation: Macquarie University. Dept. of Electronic Engineering

Identifier: http://hdl.handle.net/1959.14/167699
Identifier: ISBN:9781612847566
Identifier: ISSN:0149-645X
Identifier: mq_res-ext-2-s2.0-80052312127
Language: eng
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