Stoichiometry effects and the Moss-Burstein effect for InN | Macquarie University ResearchOnline

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Title: Stoichiometry effects and the Moss-Burstein effect for InN
Related: Physica status solidi. A : applications and materials science, Vol. 203, Issue 1, p.66-74
DOI: 10.1002/pssa.200563504
Publisher: Wiley
Date: 2006
Author/Creator: Butcher, K. S. A
Author/Creator: Hirshy, H
Author/Creator: Perks, R. M
Author/Creator: Wintrebert-Fouquet, M
Author/Creator: Chen, P. P. -T
Description: We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss-Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.
Description: 9 page(s)
Subject Keyword: x-ray diffraction
Subject Keyword: III-V semiconductors
Subject Keyword: optical constants
Subject Keyword: semiconductors
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

Macquarie University ResearchOnline