GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications | Macquarie University ResearchOnline

Home

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/14911

82 Visitors

95 Hits

1 Downloads

Title: GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications
Related: Journal of nonlinear optical physics and materials, Vol. 15, Issue 3, p.323-329
DOI: 10.1142/S0218863506003335
Publisher: World Scientific Publishing
Date: 2006
Author/Creator: Ramelan, A. H
Author/Creator: Yahya, I
Author/Creator: Prasodjo,
Author/Creator: Goldys, E. M
Description: AlₓGa₁−ₓSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth conditions on the optical properties. Samples grown at temperatures of 540°C, 580°C and 600°C and a V/III ratio of 1 have been investigated. The AlₓGa₁−ₓSb layers grown at 580°C and 600°C with a V/III ratio of 1 and Al content in the range of 0.5% to 25% were found to exhibit excellent optical quality with a very high optical transmission at energies below the bandgap. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.
Description: 7 page(s)
Subject Keyword: photoluminescence
Subject Keyword: bound exciton
Subject Keyword: donor-acceptor transitions
Subject Keyword: III/V compound semiconductors
Subject Keyword: MOCVD
Resource Type: journal article
Organisation: Macquarie University. Dept. of Physics

Macquarie University ResearchOnline