We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films’ reflectance further toward the UV, and we relate this observation to the electronic structure.
Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, 96(7), 071914, and may be found at http://apl.aip.org/resource/1/applab/v96/i7/p071914_s1