The aim of this work is to develop a scalable small signal HEMT model. We propose a general intrinsic model unit cell to build larger transistor devices according to our need and model the metal according to individual geometry using a lumped element network. The challenge we address is extraction of this network from measurement. The parameters of the intrinsic part of the transistor have been extracted from different size of transistors and scaling rule applied to the unit cell. We used MathCAD worksheet to de-embed the TriQuint transistor parameters. Multiple cells are used to build larger devices and we showed that coupling between cells with lumped element affects the S-parameter responses. The interconnection with lumped elements was varied according to the need to fit with larger device responses.
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