Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/117903
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- Title
- Very low frequency s-parameter measurements for transistor modeling
- Related
- International Conference on Electromagnetics in Advanced Applications (12th : 2010) (20 - 24 September 2010 : Sydney)
- Related
- 2010 International Conference on Electromagnetics in Advanced Applications : proceedings : ICEAA '10, 12th edition, 20-24 September, 2010, Sydney, Australia, p.386-389
- DOI
- 10.1109/ICEAA.2010.5653102
- Publisher
- Piscataway, N.J : IEEE
- Date
- 2010
- Author/Creator
- Sevimli, O
- Author/Creator
- Parker, A. E
- Author/Creator
- Fattorini, A. P
- Author/Creator
- Harvey, J. T
- Description
- Correct measurement of low frequency noise in a transistor requires prior knowledge of its s-parameters but the measurement of s-parameters at very low frequencies are difficult due to long time constants of the measurement setup and instabilities in the transistors. We report a method to stabilize and measure the s-parameters of GaAs heterojunction bipolar transistors (HBT) at frequencies as low as 10 Hz to 1 MHz, and discuss an industry standard transistor model at these frequencies.
- Description
- 4 page(s)
- Subject Keyword
- transistor modeling
- Resource Type
- conference paper
- Organisation
- Macquarie University. Dept. of Electronic Engineering
- Identifier
- http://hdl.handle.net/1959.14/117903
- Identifier
- ISBN:9781424473687
- Identifier
- mq-rm-2010001701
- Language
- eng
- Rights
- Copyright 2010 IEEE. Reprinted from 2010 International Conference on Electromagnetics in Advanced Applications : proceedings : ICEAA '10, 12th edition, 20-24 September, 2010, Sydney, Australia. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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