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Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/107769

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Title
Dissociation of H-related defect complexes in Mg-doped GaN
Related
Physical review B. Condensed matter and materials physics, Vol. 69, Issue 12 (2004), p.125210-1-125210-9
DOI
10.1103/PhysRevB.69.125210
Publisher
American Physical Society
Date
2004
FoR/RFCD Code(s)
020400 Condensed Matter Physics
Author/Creator
Gelhausen, O
Author/Creator
Phillips, M. R
Author/Creator
Goldys, E. M
Author/Creator
Paskova, T
Author/Creator
Monemar, B
Author/Creator
Strassburg, M
Author/Creator
Hoffmann, A
Description
Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately Mg-doped (p-type) GaN was found to be strongly reduced by electron irradiation and of different chemical origin than the DAP at a similar energetic position in Si-doped (n-type) GaN. These results suggest that the acceptor responsible for the 3.27 eV DAP emission in Mg-doped GaN is Mg and that the donor (20–30 meV) is hydrogen-related, possibly a (VN-H) complex. This complex is dissociated either by electron irradiation or thermal annealing in N₂ or O₂ atmosphere. We found that upon electron irradiation, a deeper emission line (centered at 3.14 eV) emerged, which was assigned to a DAP consisting of the same Mg acceptor level and a deeper donor (100–200 meV) with a similar capture cross section as the donor in the 3.27 eV emission. Moreover, two different deep donor levels at 350±30 and 440±40meV were identified as being responsible for the blue band (2.8–3.0 eV) in heavily Mg-doped GaN. The donor level at 350±30meV was strongly affected by electron irradiation and attributed to a H-related defect.
Description
9 page(s)
Subject Keyword
020400 Condensed Matter Physics
Resource Type
journal article
Organisation
Macquarie University. Dept. of Physics and Astronomy

Identifier
http://hdl.handle.net/1959.14/107769
Identifier
ISSN:1098-0121
Identifier
mq-rm-2004022314
Language
eng
Reviewed
Reviewed
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Subject
"Physical review B. Condensed matter and materials physics"
 
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