Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/102724
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- Title
- A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency
- Related
- IEEE microwave magazine, Vol. 9, No. 2 (2008), p.106-110
- DOI
- 10.1109/MMM.2008.915338
- Publisher
- IEEE
- Date
- 2008
- Author/Creator
- Boers, Michael
- Author/Creator
- Parker, Anthony
- Author/Creator
- Weste, Neil
- Description
- This article presents the winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power-added efficiency (PAE) greater than 85%. It will be shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rules can produce first-pass power amplifier design success. An overview of design, fabrication, and testing processes is presented here together with measured results.
- Description
- 5 page(s)
- Subject Keyword
- HEMT circuits
- Subject Keyword
- III-V semiconductors
- Subject Keyword
- UHF power amplifiers
- Subject Keyword
- circuit CAD
- Subject Keyword
- circuit testing
- Subject Keyword
- gallium compounds
- Resource Type
- journal article
- Organisation
- Macquarie University. Dept. of Electronic Engineering
- Identifier
- http://hdl.handle.net/1959.14/102724
- Identifier
- ISSN:1557-9581
- Identifier
- mq-rm-2008002237
- Language
- eng
