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Baseband impedance and linearization of FET circuts

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/102714

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Title: Baseband impedance and linearization of FET circuts
Related: IEEE transactions on microwave theory and techniques, Vol. 51, No. 12 (2003), p.2523-2530
DOI: 10.1109/TMTT.2003.819208
Publisher: IEEE
Date: 2003
FoR/RFCD Code(s): 090600 Electrical and Electronic Engineering
Author/Creator: Brinkhoff, James
Author/Creator: Parker, Anthony Edward
Author/Creator: Leung, Martin
Description: Baseband impedance has been identified as having a positive or negative effect on the intermodulation distortion of microwave circuits. The effect can be assessed or utilized with the aid of previously proposed figures-of-merit. Under certain situations, intermodulation cancellation can be achieved simply by adding resistance to the bias network. The impact of baseband impedance on the performance of derivative superposition amplifiers is analyzed. A bias region was studied that exhibits a good second- and third-order intermodulation with minimal intermodulation dependence on baseband impedance. This allows the effective use of the derivative superposition technique in baseband amplifiers, as well as giving wide-band linearization performance in RF amplifiers.
Description: 8 page(s)
Subject Keyword: 090600 Electrical and Electronic Engineering
Subject Keyword: intermodulation distortion
Subject Keyword: linearisation techniques
Subject Keyword: microwave amplifiers
Subject Keyword: microwave circuits
Subject Keyword: microwave field effect transistors
Resource Type: journal article
Organisation: Macquarie University. Dept. of Electronic Engineering

Identifier: http://hdl.handle.net/1959.14/102714
Identifier: ISSN:1557-9670
Identifier: mq-rm-2003018513
Language: eng
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